3sk41 Datasheet

Encapsulated in a CAN-4 metal package for improved heat dissipation and shielding. Breakdown Voltage ( Vbrcap V sub b r end-sub GSS): Approximately 7.0V . Maximum Power Dissipation ( PDcap P sub cap D ): Up to 250mW . Forward Transfer Admittance ( gfsg sub f s end-sub ): Minimum 8.0 mS (millisiemens). Input Capacitance ( Cisscap C sub i s s end-sub ): Maximum 5.0 pF . Understanding the Dual-Gate Advantage

The is a legacy, high-performance N-channel dual-gate Silicon MOSFET historically manufactured by prominent semiconductor pioneers like NEC , Hitachi , and Motorola . Enclosed in highly stable, hermetically sealed metal packages such as the TO-72 (CAN-4) , this device is highly regarded by RF engineers, vintage radio restorers, and hobbyists for its exceptional performance in high-frequency amplification and signal mixing.

) and allows for AGC (Automatic Gain Control) voltage implementation directly on the second gate. According to historical manufacturing parameters from suppliers like Jotrin Electronics and Veswin , the primary limits and electrical behaviors include: 3sk41 datasheet

Acting as the first stage of amplification.

RDS(on)cap R sub cap D cap S open paren o n close paren end-sub Encapsulated in a CAN-4 metal package for improved

Engineers and repair technicians looking for pricing, availability, and alternative replacements can find details across component networks like Jotrin Electronics and Veswin . Core Specifications and Absolute Maximum Ratings

Ideal for RF amplifiers, mixers, and Automatic Gain Control (AGC) circuits in radio receivers. Forward Transfer Admittance ( gfsg sub f s

While a standard essay on a datasheet might sound dry, the "3sk41" is actually a fascinating subject because it sits at the precise intersection of consumer history and electronic obsolescence. The 3SK41 is not a modern microprocessor; it is a , a component that was once the beating heart of the VHF and UHF tuners in analog television sets.

The dual-gate structure reduces the internal feedback capacitance ( cap C sub r s s end-sub